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GAN111-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 21 A, 0.114 ohm, 4.9 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoGAN111-650WSBQ
Order Code4550980RL
Your Part Number
Technical Datasheet
202 total stock globally
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202 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 10+ | $15.370 ($16.907) |
| 50+ | $13.900 ($15.290) |
| 100+ | $12.420 ($13.662) |
| 250+ | $11.490 ($12.639) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
$153.70 ($169.07 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.114ohm
No. of Pins
3Pins
Continuous Drain Current Id
21A
Typical Gate Charge
4.9nC
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001