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GAN111-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 21 A, 0.114 ohm, 4.9 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoGAN111-650WSBQ
Order Code4550980
Your Part Number
Technical Datasheet
202 total stock globally
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202 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $22.180 ($24.398) |
| 5+ | $18.780 ($20.658) |
| 10+ | $15.370 ($16.907) |
| 50+ | $13.900 ($15.290) |
| 100+ | $12.420 ($13.662) |
| 250+ | $11.490 ($12.639) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$22.18 ($24.40 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN111-650WSBQ
Order Code4550980
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id21A
Drain Source On State Resistance0.114ohm
Typical Gate Charge4.9nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.114ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
Continuous Drain Current Id
21A
Typical Gate Charge
4.9nC
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001