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VS-3C10ET07S2L-M3
Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 29 nC, TO-263AB (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoVS-3C10ET07S2L-M3
Order Code4486782RL
Your Part Number
Technical Datasheet
804 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $5.410 ($5.951) |
| 500+ | $5.040 ($5.544) |
| 1000+ | $4.720 ($5.192) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$541.00 ($595.10 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-3C10ET07S2L-M3
Order Code4486782RL
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current10A
Total Capacitive Charge29nC
Diode Case StyleTO-263AB (D2PAK)
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
VS-3C10ET07S2L-M3 is a 650V, 10A Gen 3 power SiC merged PIN schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
- Majority carrier diode using schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behaviour
- 175°C maximum operating junction temperature
- MPS structure for high ruggedness to forward current surge events
- Meets JESD 201 class 1A whisker test
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
29nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
Lead (25-Jun-2025)
Diode Configuration
Single
Average Forward Current
10A
Diode Case Style
TO-263AB (D2PAK)
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002