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SIZF928DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 248 A, 248 A, 530 µohm
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ManufacturerVISHAY
Manufacturer Part NoSIZF928DT-T1-GE3
Order Code3765812RL
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.750 ($1.925) |
| 500+ | $1.400 ($1.540) |
| 1000+ | $1.290 ($1.419) |
| 5000+ | $1.170 ($1.287) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$175.00 ($192.50 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF928DT-T1-GE3
Order Code3765812RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id248A
On Resistance Rds(on)530µohm
Continuous Drain Current Id N Channel248A
Continuous Drain Current Id P Channel248A
Drain Source On State Resistance N Channel530µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel530µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2V
No. of Pins8Pins
Power Dissipation Pd74W
Power Dissipation N Channel74W
Power Dissipation P Channel74W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Product Overview
Dual N-channel 30V (D-S) MOSFET I typically used in applications such as CPU core power, computer / server peripherals, POL, synchronous buck converter and telecom DC/DC.
- TrenchFET® Gen IV power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
530µohm
Continuous Drain Current Id P Channel
248A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
74W
Power Dissipation P Channel
74W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
248A
Continuous Drain Current Id N Channel
248A
Drain Source On State Resistance N Channel
530µohm
Drain Source On State Resistance P Channel
530µohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001