Print Page
SIZ998DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 2200 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ998DT-T1-GE3
Order Code2802799RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
11,084 total stock globally
Need more?
11084 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.510 ($1.661) |
| 500+ | $1.200 ($1.320) |
| 1000+ | $1.130 ($1.243) |
| 5000+ | $1.050 ($1.155) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$151.00 ($166.10 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ998DT-T1-GE3
Order Code2802799RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id60A
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.0022ohm
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel2200µohm
Drain Source On State Resistance P Channel2200µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
No. of Pins8Pins
Power Dissipation Pd32.9W
Power Dissipation N Channel32.9W
Power Dissipation P Channel32.9W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
2200µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
32.9W
Power Dissipation P Channel
32.9W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0022ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
2200µohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
32.9W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SIZ998DT-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006