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SIZ926DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 60 A, 60 A, 3800 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ926DT-T1-GE3
Order Code2747682RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
Notify me when back in stock
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.320 ($1.452) |
| 500+ | $1.040 ($1.144) |
| 1000+ | $0.903 ($0.9933) |
| 5000+ | $0.880 ($0.968) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$132.00 ($145.20 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ926DT-T1-GE3
Order Code2747682RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel + Schottky
Transistor PolarityN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.0038ohm
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel3800µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel3800µohm
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd40W
No. of Pins8Pins
Power Dissipation N Channel40W
Power Dissipation P Channel40W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
3800µohm
Drain Source On State Resistance P Channel
3800µohm
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation P Channel
40W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
On Resistance Rds(on)
0.0038ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
Power Dissipation Pd
40W
Power Dissipation N Channel
40W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001