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SIZ256DT-T1-GE3
Dual MOSFET, N Channel, 70 V, 70 V, 31.8 A, 31.8 A, 0.0137 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ256DT-T1-GE3
Order Code3605913RL
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.330 ($1.463) |
| 500+ | $1.060 ($1.166) |
| 1000+ | $0.841 ($0.9251) |
| 5000+ | $0.824 ($0.9064) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$133.00 ($146.30 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ256DT-T1-GE3
Order Code3605913RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds70V
Drain Source Voltage Vds N Channel70V
Continuous Drain Current Id31.8A
Drain Source Voltage Vds P Channel70V
Continuous Drain Current Id N Channel31.8A
On Resistance Rds(on)0.0137ohm
Continuous Drain Current Id P Channel31.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0137ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.0137ohm
Gate Source Threshold Voltage Max1.5V
Transistor Case StylePowerPAIR
Power Dissipation Pd33W
No. of Pins8Pins
Power Dissipation N Channel33W
Power Dissipation P Channel33W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
70V
Continuous Drain Current Id
31.8A
Continuous Drain Current Id N Channel
31.8A
Continuous Drain Current Id P Channel
31.8A
Drain Source On State Resistance N Channel
0.0137ohm
Drain Source On State Resistance P Channel
0.0137ohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation P Channel
33W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
70V
Drain Source Voltage Vds P Channel
70V
On Resistance Rds(on)
0.0137ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
33W
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005