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SI9945BDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3
Order Code1794822RL
Your Part Number
Technical Datasheet
140 total stock globally
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Available until stock is exhausted
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $2.080 ($2.288) |
| 500+ | $2.040 ($2.244) |
| 1000+ | $1.990 ($2.189) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$208.00 ($228.80 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3
Order Code1794822RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.3A
On Resistance Rds(on)0.046ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.046ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOIC
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
5.3A
Continuous Drain Current Id N Channel
5.3A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.046ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.046ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000119