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SI7938DP-T1-GE3
Dual MOSFET, N Channel, 40 V, 60 A, 4800 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7938DP-T1-GE3Copy
Manufacturer Standard Lead Time55 weeks
Order Code
Re-Reel1853789RL
Cut Tape1853789
Your Part Number
44,607 total stock globally
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38,726 Delivery in 10-14 Business Days(US stock)
5,881 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.890 | $3.89 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $3.890 ($4.279) |
| 10+ | $2.500 ($2.750) |
| 100+ | $1.700 ($1.870) |
| 500+ | $1.360 ($1.496) |
| 1000+ | $1.270 ($1.397) |
| 5000+ | $1.170 ($1.287) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7938DP-T1-GE3Copy
Manufacturer Standard Lead Time55 weeks
Order Code
Re-Reel1853789RL
Cut Tape1853789
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel4800µohm
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation N Channel3.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
The SI7938DP-T1-GE3 is a 40V Dual N-channel TrenchFET® Power MOSFET. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
4800µohm
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00023