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MG600Q2YMS3(DAE)
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module
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ManufacturerTOSHIBA
Manufacturer Part NoMG600Q2YMS3(DAE)
Order Code4860997
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $3,358.380 ($3,694.218) |
Price for:Each
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Multiple: 1
$3,358.38 ($3,694.22 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoMG600Q2YMS3(DAE)
Order Code4860997
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id600A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation2kW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
600A
Drain Source On State Resistance
-
No. of Pins
11Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
2kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.36