STQ1HNK60R-AP
Power MOSFET, N Channel, 600 V, 400 mA, 8 ohm, TO-92, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.760 ($1.936) |
| 10+ | $0.813 ($0.8943) |
| 100+ | $0.720 ($0.792) |
| 500+ | $0.557 ($0.6127) |
| 1000+ | $0.420 ($0.462) |
| 5000+ | $0.412 ($0.4532) |
Product Information
Product Overview
The STQ1HNK60R-AP is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- Improved ESD capability
- New high voltage benchmark
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
400mA
TO-92
10V
3W
150°C
-
No SVHC (25-Jun-2025)
600V
8ohm
Through Hole
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate