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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP80NF55-06
Order Code129198701
Technical Datasheet
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance6500µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
SVHCLead (21-Jan-2025)
Product Overview
The STP80NF55-06 is a 55V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
Applications
Industrial
Technical Specifications
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6500µohm
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
MSL
MSL 2 - 1 year
Continuous Drain Current Id
80A
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.036287
