L6386ADTR
Gate Driver, 2 Channels, High Side and Low Side, IGBT, MOSFET, 14 Pins, SOIC
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.510 ($1.661) |
| 10+ | $1.480 ($1.628) |
| 50+ | $1.450 ($1.595) |
| 100+ | $1.420 ($1.562) |
| 250+ | $1.380 ($1.518) |
| 500+ | $1.350 ($1.485) |
| 1000+ | $1.320 ($1.452) |
| 2500+ | $1.280 ($1.408) |
Product Information
Product Overview
L6386ADTR is a high voltage high and low-side driver. It is manufactured with the BCD™ offline technology, and able to drive one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600V. Both device outputs can independently sink and source 650mA and 400mA respectively and can be simultaneously driven for high half-bridge configurations. This driver is ideal for applications such as home appliances, induction heating, motor drivers, SR motors, DC, AC, PMDC and PMAC motors, asymmetrical half-bridge topologies, HVAC, lighting applications, factory automation, power supply system etc.
- dV/dt immunity to ±50V/nsec in full temperature range
- Switching times 50/30nsec, rise/fall with 1nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Undervoltage lockout on lower and upper driving section
- Integrated bootstrap diode, case style is SO-14
- Outputs in phase with inputs
- Junction operating temperature range is -45°C to 125°C
- Driver current capability is 400mA source and 650mA for sink
Technical Specifications
2Channels
High Side and Low Side
14Pins
Surface Mount
400mA
-
-45°C
110ns
-
No SVHC (21-Jan-2025)
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IGBT, MOSFET
SOIC
Inverting
650mA
17V
125°C
110ns
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate