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FDA59N25
Power MOSFET, N Channel, 250 V, 59 A, 0.049 ohm, TO-3P, Through Hole
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| Quantity | Price (Incl GST) |
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| 1+ | $4.520 ($4.972) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDA59N25
Order Code122835201
Technical Datasheet
Drain Source Voltage Vds250V
Continuous Drain Current Id59A
Drain Source On State Resistance0.049ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation392W
No. of Pins3Pins
Operating Temperature Max150°C
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDA59N25 is an UniFET™ N-channel MOSFET produced using high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 63nC typical low gate charge
- 70pF typical low Crss
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.049ohm
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
MSL
-
Continuous Drain Current Id
59A
Rds(on) Test Voltage
10V
Power Dissipation
392W
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005