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NDS9945.
Dual MOSFET, N Channel, 60 V, 3.5 A, 0.1 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS9945.
Order Code
Re-Reel1653654RL
Cut Tape1653654
Your Part Number
3,091 total stock globally
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.980 | $9.90 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.980 ($2.178) |
| 50+ | $1.800 ($1.980) |
| 100+ | $1.610 ($1.771) |
| 500+ | $1.390 ($1.529) |
| 1000+ | $1.380 ($1.518) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS9945.
Order Code
Re-Reel1653654RL
Cut Tape1653654
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.1ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDS9945 is a dual N-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 10A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.1ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907