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HGTG30N60A4
IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins
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ManufacturerONSEMI
Manufacturer Part NoHGTG30N60A4
Order Code1095113
Your Part Number
Technical Datasheet
No Longer Manufactured
Product Information
Product Overview
The HGTG30N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and low on state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
- Low saturation voltage
- Low conduction losses due to low on-state resistance
- 58ns fall time at 125°C junction temperature
Applications
Power Management, Industrial
Technical Specifications
MSL
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Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00546