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ECH8651R-TL-H
Dual MOSFET, N Channel, 24 V, 24 V, 10 A, 10 A, 0.014 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoECH8651R-TL-HCopy
Manufacturer Standard Lead Time20 weeks
Order Code
Re-Reel2724447RL
Cut Tape2724447
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.970 | $1.97 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.970 ($2.167) |
| 10+ | $0.920 ($1.012) |
| 100+ | $0.816 ($0.8976) |
| 500+ | $0.636 ($0.6996) |
| 1000+ | $0.501 ($0.5511) |
| 5000+ | $0.467 ($0.5137) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoECH8651R-TL-HCopy
Manufacturer Standard Lead Time20 weeks
Order Code
Re-Reel2724447RL
Cut Tape2724447
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel24V
Drain Source Voltage Vds P Channel24V
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.014ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-28FL
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
- Low On-Resistance
- 2.5V drive
- Common-drain type dual MOSFET
- Built-in proctetion diodes
- Built-in gate protection resistors
- Best suited for lithium battery (LiB) charging/discharging switching
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
24V
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
24V
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.014ohm
Transistor Case Style
SOT-28FL
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001