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NGB15T65M3DFPJ
IGBT, 33 A, 1.53 V, 127 W, 650 V, TO-263AB (D2PAK), 3 Pins
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ManufacturerNEXPERIA
Manufacturer Part NoNGB15T65M3DFPJ
Order Code4745451RL
Your Part Number
Technical Datasheet
800 total stock globally
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800 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.790 ($1.969) |
| 500+ | $1.510 ($1.661) |
| 1000+ | $1.370 ($1.507) |
| 5000+ | $1.360 ($1.496) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$179.00 ($196.90 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGB15T65M3DFPJ
Order Code4745451RL
Technical Datasheet
SVHCLead (25-Jun-2025)
Product Overview
NGB15T65M3DFPJ is a 650V, 15A trench field-stop IGBT with full rated silicon diode in a 3 pin D2PAK package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 15 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
Technical Specifications
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001