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MT53E512M32D1NP-046 WT:B
DRAM, Mobile LPDDR4, 16 Gbit, 512M x 32bit, 2.133 GHz, WFBGA, 200 Pins
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ManufacturerMICRON
Manufacturer Part NoMT53E512M32D1NP-046 WT:B
Order Code3954465
Your Part Number
Technical Datasheet
168 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $150.150 ($165.165) |
| 5+ | $144.490 ($158.939) |
| 10+ | $138.820 ($152.702) |
| 25+ | $134.370 ($147.807) |
Price for:Each
Minimum: 1
Multiple: 1
$150.15 ($165.16 inc GST)
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E512M32D1NP-046 WT:B
Order Code3954465
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density16Gbit
Memory Configuration512M x 32bit
Clock Frequency Max2.133GHz
IC Case / PackageWFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
Product Overview
MT53E512M32D1NP-046 WT:B is a DRAM IC.
- 16Gb density, 512M x32 component configuration
- 2133MHz speed
- 1.1/0.6V I/O voltage
- Operating temperature range from -25°C to +85°C
- 200-ball WFBGA package
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Configuration
512M x 32bit
IC Case / Package
WFBGA
Supply Voltage Nom
1.1V
Operating Temperature Min
-25°C
Product Range
-
Memory Density
16Gbit
Clock Frequency Max
2.133GHz
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001