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IRLZ24NPBF
Power MOSFET, N Channel, 55 V, 18 A, 0.06 ohm, TO-220AB, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIRLZ24NPBF
Order Code8651388
Also Known AsSP001553022
Your Part Number
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLZ24NPBF
Order Code8651388
Also Known AsSP001553022
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id18A
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Alternatives for IRLZ24NPBF
2 Products Found
Product Overview
The IRLZ24NPBF is a 55V single N-channel HEXFET Power MOSFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
- Logic-level gate drive
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Planar MOSFET technology
- Industry-leading quality
- ±16V Gate to source voltage
- 0.30W/°C Linear derating factor
- 11A Avalanche current (IAR)
- 3.3°C/W Thermal resistance, junction to case
- 62°C/W Thermal resistance, junction to ambient
Applications
Industrial, Commercial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814