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IRLU3636PBF
Power MOSFET, N Channel, 60 V, 50 A, 6800 µohm, TO-251AA, Through Hole
1,692 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $5.330 ($5.863) |
| 10+ | $3.300 ($3.630) |
| 100+ | $2.490 ($2.739) |
| 500+ | $2.050 ($2.255) |
| 1000+ | $1.800 ($1.980) |
| 5000+ | $1.700 ($1.870) |
Price for:Each
Minimum: 1
Multiple: 1
$5.33 ($5.86 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLU3636PBFCopy
Manufacturer Standard Lead Time15 weeks
Order Code2781157
Product RangeHEXFET
Also Known AsSP001567320
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance6800µohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation143W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
143W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
6800µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000522