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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.400 ($4.840) |
| 10+ | $2.940 ($3.234) |
| 100+ | $2.050 ($2.255) |
| 500+ | $1.420 ($1.562) |
| 1000+ | $1.390 ($1.529) |
| 5000+ | $1.370 ($1.507) |
Product Information
Product Overview
The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Power Management
Technical Specifications
N Channel
100A
TO-263 (D2PAK)
10V
3.8W
175°C
-
Lead (25-Jun-2025)
75V
7800µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate