IPW65R045C7FKSA1
Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-247, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $17.350 ($19.085) |
| 5+ | $16.110 ($17.721) |
| 10+ | $14.870 ($16.357) |
| 50+ | $13.270 ($14.597) |
| 100+ | $11.670 ($12.837) |
| 250+ | $11.440 ($12.584) |
Product Information
Product Overview
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Applications
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Power Management
Technical Specifications
N Channel
46A
TO-247
10V
227W
150°C
-
No SVHC (25-Jun-2025)
650V
0.04ohm
Through Hole
3.5V
3Pins
-
-
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate