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IPB072N15N3GATMA1
Power MOSFET, N Channel, 150 V, 100 A, 7200 µohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB072N15N3GATMA1Copy
Manufacturer Standard Lead Time39 weeks
Order Code
Re-Reel1775544RL
Cut Tape1775544
Also Known AsIPB072N15N3 G, SP000386664
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $8.240 | $8.24 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $8.240 ($9.064) |
| 10+ | $5.390 ($5.929) |
| 50+ | $4.030 ($4.433) |
| 200+ | $3.770 ($4.147) |
| 500+ | $3.510 ($3.861) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB072N15N3GATMA1Copy
Manufacturer Standard Lead Time39 weeks
Order Code
Re-Reel1775544RL
Cut Tape1775544
Also Known AsIPB072N15N3 G, SP000386664
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id100A
Drain Source On State Resistance7200µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption.
- Environment-friendly
- High power density
- Smallest board-space consumption
- Easy-to-design
Applications
Power Management, Motor Drive & Control, Communications & Networking, Audio
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
7200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001585