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IGT65R045D2XTMA1
Gallium Nitride (GaN) Transistor, 650 V, 38 A, 0.054 ohm, 6 nC, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGT65R045D2XTMA1
Order Code4640394RL
Your Part Number
Technical Datasheet
1,480 total stock globally
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1480 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 10+ | $8.110 ($8.921) |
| 50+ | $7.510 ($8.261) |
| 100+ | $7.020 ($7.722) |
| 250+ | $6.880 ($7.568) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
$81.10 ($89.21 inc GST)
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Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.054ohm
No. of Pins
8Pins
Continuous Drain Current Id
38A
Typical Gate Charge
6nC
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001