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BGA7H1N6E6327XTSA1
Low Noise Amplifier, LTE, 2.3 GHz to 2.69 GHz, 12.5 dB Gain, 0.65 dB Noise, 1.5 V to 3.3 V, TSNP-6
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BGA7H1N6E6327XTSA1Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Re-Reel2565692RL Cut Tape2565692 |
| Also Known As | BGA 7H1N6 E6327, SP001109130 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.280 | $1.28 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.280 ($1.408) |
| 10+ | $0.890 ($0.979) |
| 100+ | $0.724 ($0.7964) |
| 500+ | $0.691 ($0.7601) |
| 1000+ | $0.665 ($0.7315) |
| 2500+ | $0.636 ($0.6996) |
| 5000+ | $0.620 ($0.682) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BGA7H1N6E6327XTSA1Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Re-Reel2565692RL Cut Tape2565692 |
| Also Known As | BGA 7H1N6 E6327, SP001109130 |
| Technical Datasheet | |
| Frequency Min | 2.3GHz |
| Frequency Max | 2.69GHz |
| No. of Channels | 1Channels |
| Gain | 12.5dB |
| Frequency Response RF Min | 2.3GHz |
| Noise Figure Typ | 0.65dB |
| RF IC Case Style | TSNP |
| Frequency Response RF Max | 2.69GHz |
| Gain Typ | 12.5dB |
| Third Order Output Intercept Point OIP3 Typ | - |
| Supply Voltage Min | 1.5V |
| Supply Voltage Max | 3.3V |
| IC Case / Package | TSNP |
| No. of Pins | 6Pins |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 85°C |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
BGA7H1N6E6327XTSA1 is a silicon germanium low noise amplifier for LTE which covers a wide frequency range from 2300MHz to 2690MHz. The LNA provides a 12.5dB gain and 0.60dB noise figure at a current consumption of 4.7mA. The BGA7H1N6 is based upon Infineon Technologies‘ B7HF Silicon germanium technology.
- Digital on/off switch (1V logic high level)
- B7HF silicon germanium technology, RF output internally matched to 50 ohm
- Only 1 external SMD component necessary, 2KV HBM ESD protection (including AI-pin)
- Supply voltage range from 1.5 to 3.3V (A = 25°C, VCC = 1.8V)
- Noise figure is 0.65dB (typ, ZS = 50 ohm, TA = 25°C)
- Reverse isolation is 20dB (typ, TA = 25°C, VCC = 1.8V)
- Stability is <gt/> 1 (typ, f= 20MHz to 10GHz, TA = 25°C)
- Ultra small TSNP-6-2 leadless package
- Ambient temperature range from -40 to 85°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Frequency Min | 2.3GHz |
|---|---|
| No. of Channels | 1Channels |
| Frequency Response RF Min | 2.3GHz |
| RF IC Case Style | TSNP |
| Gain Typ | 12.5dB |
| Supply Voltage Min | 1.5V |
| IC Case / Package | TSNP |
| Operating Temperature Min | -40°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
| Frequency Max | 2.69GHz |
|---|---|
| Gain | 12.5dB |
| Noise Figure Typ | 0.65dB |
| Frequency Response RF Max | 2.69GHz |
| Third Order Output Intercept Point OIP3 Typ | - |
| Supply Voltage Max | 3.3V |
| No. of Pins | 6Pins |
| Operating Temperature Max | 85°C |
| MSL | MSL 1 - Unlimited |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Malaysia Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85423990 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000008 |