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DMHC4035LSDQ-13
Dual MOSFET, Complementary Dual N and Dual P Channel, 40 V, 40 V, 4.5 A, 4.5 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMHC4035LSDQ-13Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944081RL
Cut Tape3944081
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.970 | $2.97 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.970 ($3.267) |
| 10+ | $1.670 ($1.837) |
| 100+ | $1.240 ($1.364) |
| 500+ | $1.020 ($1.122) |
| 1000+ | $0.797 ($0.8767) |
| 5000+ | $0.782 ($0.8602) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMHC4035LSDQ-13Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944081RL
Cut Tape3944081
Technical Datasheet
Channel TypeComplementary Dual N and Dual P Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel0.065ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Product Overview
DMHC4035LSDQ-13 is a 40V complementary enhancement mode MOSFET H-bridge features 2 N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 the H bridge is ideally suited to driving solenoids, DC motors and audio outputs.
- Drain-source voltage is 40V, gate-source voltage is ±20V
- Pulsed drain current is 25A
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Qualified to AEC-Q101 standards for high reliability
- PPAP capable
- Total power dissipation is 5W
Technical Specifications
Channel Type
Complementary Dual N and Dual P Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.065ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001