Print Page
DMC31D5UDJ-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 220 mA, 220 mA, 1.5 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC31D5UDJ-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944048RL
Cut Tape3944048
Your Part Number
2,440 total stock globally
Need more?
2,440 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | $1.220 | $6.10 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.220 ($1.342) |
| 10+ | $0.555 ($0.6105) |
| 100+ | $0.489 ($0.5379) |
| 500+ | $0.412 ($0.4532) |
| 1000+ | $0.347 ($0.3817) |
| 5000+ | $0.341 ($0.3751) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC31D5UDJ-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944048RL
Cut Tape3944048
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id220mA
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel220mA
On Resistance Rds(on)0.9ohm
Continuous Drain Current Id P Channel220mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.5ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel5ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-963
No. of Pins6Pins
Power Dissipation Pd350mW
Power Dissipation N Channel350mW
Power Dissipation P Channel350mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
220mA
Continuous Drain Current Id N Channel
220mA
Continuous Drain Current Id P Channel
220mA
Drain Source On State Resistance N Channel
1.5ohm
Drain Source On State Resistance P Channel
5ohm
Transistor Case Style
SOT-963
Power Dissipation Pd
350mW
Power Dissipation P Channel
350mW
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.9ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation N Channel
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001