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DMC21D1UDA-7B
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 455 mA, 455 mA, 0.99 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC21D1UDA-7BCopy
Manufacturer Standard Lead Time26 weeks
Order Code
Re-Reel3944027RL
Cut Tape3944027
Your Part Number
6,038 total stock globally
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | $0.697 | $3.48 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.697 ($0.7667) |
| 10+ | $0.531 ($0.5841) |
| 100+ | $0.246 ($0.2706) |
| 500+ | $0.228 ($0.2508) |
| 1000+ | $0.161 ($0.1771) |
| 5000+ | $0.158 ($0.1738) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC21D1UDA-7BCopy
Manufacturer Standard Lead Time26 weeks
Order Code
Re-Reel3944027RL
Cut Tape3944027
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id455mA
Continuous Drain Current Id N Channel455mA
On Resistance Rds(on)0.5ohm
Continuous Drain Current Id P Channel455mA
Drain Source On State Resistance N Channel0.99ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel1.9ohm
Transistor Case StyleX2-DFN0806
Gate Source Threshold Voltage Max750mV
Power Dissipation Pd300mW
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
455mA
Continuous Drain Current Id P Channel
455mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1.9ohm
Gate Source Threshold Voltage Max
750mV
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
455mA
On Resistance Rds(on)
0.5ohm
Drain Source On State Resistance N Channel
0.99ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
X2-DFN0806
Power Dissipation Pd
300mW
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001