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DMC2057UVT-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4 A, 4 A, 0.042 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC2057UVT-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944026RL
Cut Tape3944026
Your Part Number
2,460 total stock globally
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2,460 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | $1.200 | $6.00 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.200 ($1.320) |
| 10+ | $0.746 ($0.8206) |
| 100+ | $0.475 ($0.5225) |
| 500+ | $0.325 ($0.3575) |
| 1000+ | $0.202 ($0.2222) |
| 5000+ | $0.198 ($0.2178) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2057UVT-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944026RL
Cut Tape3944026
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.032ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.042ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd1.1W
No. of Pins6Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.032ohm
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.07ohm
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Power Dissipation P Channel
1.1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.042ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
Power Dissipation Pd
1.1W
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001