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BSS123W-7-F
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBSS123W-7-F
Order Code3127241RL
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.217 ($0.2387) |
| 500+ | $0.143 ($0.1573) |
| 1500+ | $0.141 ($0.1551) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$21.70 ($23.87 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS123W-7-F
Order Code3127241RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSS123W-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include small servo motor controls, power MOSFET gate drivers, switching applications.
- Low gate threshold voltage, low input capacitance
- Fast switching speed, low input/output leakage
- High drain-source voltage rating
- Drain-source voltage is 100V at TA=+25°C
- Continuous gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current is 680mA at TA=+25°C
- Total power dissipation is 200mW at TA=+25°C
- Static drain-source on-resistance is 6ohm max at VGS=10V, ID=0.17A, TA=+25°C
- SOT323 package
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005