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DMN2005DLP4K-7
Dual MOSFET, N Channel, 20 V, 20 V, 300 mA, 300 mA, 1.5 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN2005DLP4K-7
Order Code
Re-Reel3944089RL
Cut Tape3944089
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | $0.971 | $4.85 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.971 ($1.0681) |
| 10+ | $0.600 ($0.660) |
| 100+ | $0.384 ($0.4224) |
| 500+ | $0.292 ($0.3212) |
| 1000+ | $0.232 ($0.2552) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2005DLP4K-7
Order Code
Re-Reel3944089RL
Cut Tape3944089
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id300mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.35ohm
Continuous Drain Current Id N Channel300mA
Continuous Drain Current Id P Channel300mA
Drain Source On State Resistance N Channel1.5ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4V
Transistor Case StyleX2-DFN1310
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd400mW
No. of Pins6Pins
Power Dissipation N Channel400mW
Power Dissipation P Channel400mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
300mA
On Resistance Rds(on)
0.35ohm
Continuous Drain Current Id P Channel
300mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4V
Gate Source Threshold Voltage Max
900mV
No. of Pins
6Pins
Power Dissipation P Channel
400mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
300mA
Drain Source On State Resistance N Channel
1.5ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
X2-DFN1310
Power Dissipation Pd
400mW
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001