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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.960 ($2.156) |
| 10+ | $0.988 ($1.0868) |
| 100+ | $0.792 ($0.8712) |
| 500+ | $0.631 ($0.6941) |
| 1000+ | $0.570 ($0.627) |
| 5000+ | $0.498 ($0.5478) |
Product Information
Product Overview
The 2N6052 is a high-performance PNP silicon Darlington power transistor, engineered for applications requiring high current handling, high voltage tolerance, and extremely high current gain. Encapsulated in a rugged TO-3 metal can package, this transistor is built to deliver reliable performance under demanding thermal and electrical conditions. With a collector current rating up to 10A, collector-emitter voltage up to –100V, and DC current gain exceeding 1000, the 2N6052 is ideal for power switching, motor control, and high-side load driving in both consumer and industrial electronics. The integrated Darlington pair offers high gain with minimal base current, making it particularly effective in low-drive control systems and buffer stages.
- PNP Darlington bipolar power transistor
- Collector-emitter voltage (VCEO): –100V
- Collector current (IC): up to 10A
- DC current gain (hFE): <gt/>1000
- TO-3 metal package for superior heat dissipation
- Low base drive requirements
- Designed for linear and switching applications
Applications
Audio, Signal Processing, LED Lighting, Motor Drive & Control, Power Management, DC/DC Converters, Temperature, Industrial Automation
Technical Specifications
PNP
150W
TO-3
750hFE
200°C
AEC-Q101
100V
12A
3Pins
Through Hole
Multicomp Pro Darlington PNP Transistors
No SVHC (25-Jun-2025)
Technical Docs (1)
Alternatives for 2N6052.
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Product Compliance Certificate