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NXP MMZ09332BT1

High Efficiency/Linearity Amplifier, 130 MHz to 1 GHz, 30.5 dB Gain, 3 V to 5 V, HVQFN-12, 175 °C

NXP MMZ09332BT1
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Manufacturer:
NXP NXP
Manufacturer Part No:
MMZ09332BT1
Order Code:
2890394RL
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Technical Datasheet:
MMZ09332BT1   Datasheet
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Product Overview

MMZ09332BT1 is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.
  • Frequency range from 130 to 1000MHz
  • P1dB is 33dBm, 450 to 1000MHz and OIP3 is up to 48dBm at 900MHz
  • Excellent linearity
  • Active bias control (adjustable externally)
  • Single 3 to 5V supply
  • Single ended power detector
  • 1200mA total supply current
  • 29dBm RF input power
  • 12 lead HVQFN package
  • 175°C junction temperature

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
130MHz

:
1GHz

:
30.5dB

:
-

:
HVQFN

:
12Pins

:
3V

:
5V

:
-

:
175°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (1)

Packaging type Re-reel
"
 
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3,560 total stock globally Need more?

3,560 UK stock available for 5-8 business days delivery

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$12.40 ( $13.64  Inc. GST)

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