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INFINEON IRF1104PBF

Power MOSFET, N Channel, 40 V, 100 A, 0.009 ohm, TO-220AB, Through Hole

INFINEON IRF1104PBF
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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF1104PBF
Order Code:
3155125
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Also Known As:
SP001570050
Technical Datasheet:
IRF1104PBF   Datasheet
ECAD / MCAD
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Product Overview

IRF1104PBF is a HEXFET® Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fast switching, fully avalanche rated
  • Drain-to-source breakdown voltage is 40V (max, VGS = 0V, ID = 250µA)
  • Breakdown voltage temp coefficient is 0.038V/°C (typ, 25°C, ID = 1mA)
  • Gate threshold voltage range from 2.0 to 4.0V (VDS = VGS, ID = 250µA)
  • Forward transconductance is 37S (max, VDS = 25V, ID = 60A)
  • Drain-to-source leakage current is 25µA (typ, VDS = 40V, VGS = 0V)
  • Total gate charge is 93nC (max, ID = 60A, TJ = 25°C)
  • Turn-on delay time is 15ns (typ, VDD = 20V, TJ = 25°C)
  • TO-220 package, operating and storage temperature range from -55 to +175°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
40V

:
100A

:
0.009ohm

:
10V

:
4V

:
170W

:
3Pins

:
175°C

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Technical Documents (1)

Also Known As

SP001570050

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18,766 UK stock available for 5-8 business days delivery

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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