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H27U1G8F2BTR-BC - 

Flash Memory, NAND, SLC NAND, 1 Gbit, 128M x 8bit, TSOP, 48 Pins

H27U1G8F2BTR-BC - Flash Memory, NAND, SLC NAND, 1 Gbit, 128M x 8bit, TSOP, 48 Pins

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Manufacturer Part No:
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3V SLC NAND Flash Memories
Technical Datasheet:
H27U1G8F2BTR-BC   Datasheet
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Product Information

128M x 8bit
3V SLC NAND Flash Memories
No SVHC (15-Jan-2018)
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Product Overview

The H27U1G8F2BTR-BC is a NAND Flash, it has 128MB x 8-bit with spare 4MB x 8-bit capacity. The device is offered in 3.3V VCC power supply and with x8 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages. A program operation allows writing the 2112 byte page in typical 200µs and an erase operation can be performed in typical 2.0ms on a 128kb block. Data in the page can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.
  • NAND Interface - x8 Bus Width, Address/Data Multiplexing, Pin-out Compatibility for All Densities
  • (2K + 64) Bytes x 64 Pages x 1024 Blocks Memory Cell Array
  • (2K + 64 Spare) Bytes Page
  • (128K + 4K Spare) Bytes Block
  • 25µs (Maximum) Random Access
  • 25ns (Minimum) Sequential Access
  • 200µs (Typical) Page Program Time
  • 2ms (Typical) Block Erase Time Fast Block Erase


Computers & Computer Peripherals


Except for the rating Operating Temperature Range, stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device.

No Longer Stocked

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