NXP Semiconductors - Discretes

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Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Operating Frequency Min Operating Frequency Max Transistor Case Style No. of Pins Operating Temperature Max Channel Type Transistor Mounting Product Range
 
 
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AFT05MS004NT1
AFT05MS004NT1 - RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

2776253

RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

NXP

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30VDC - 28W 136MHz 941MHz SOT-89 3Pins 150°C N Channel Surface Mount -
MRFE6VP61K25HR6
MRFE6VP61K25HR6 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

2776247

RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

NXP

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133VDC - 1.333kW 1.8MHz 600MHz NI-1230 4Pins 225°C N Channel Flange -
MRF300AN
MRF300AN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917575

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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133V - 272W 1.8MHz 250MHz TO-247 3Pins 175°C N Channel Through Hole MRF300AN; MRF300BN
MRF101AN
MRF101AN - RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

2985308

RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

NXP

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- - 182W - - TO-220 3Pins - N Channel Through Hole -
PMBFJ177,215.
PMBFJ177,215. - RF JFET, N CH, 30V, 20MA, 3-SOT-23

2393595

RF JFET, N CH, 30V, 20MA, 3-SOT-23

NXP

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- - 300mW - - SOT-23 - 150°C - Surface Mount -
BB202,115.
BB202,115. - VARICAP DIODE, 33.5pF, SOD-523

2133898

VARICAP DIODE, 33.5pF, SOD-523

NXP

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- - - - - - - 85°C - - BB202 Series
BFU590GX
BFU590GX - Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

2776268

Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

NXP

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- - 2W - - SOT-223 4Pins 150°C - Surface Mount -
MRFE6VP5600HR5
MRFE6VP5600HR5 - RF FET Transistor, 130 VDC, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

2776265

RF FET Transistor, 130 VDC, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

NXP

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130VDC - 1.667kW 1.8MHz 600MHz NI-1230 4Pins 225°C N Channel Flange -
MRFE6VP6300HR5
MRFE6VP6300HR5 - RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

2776250

RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

NXP

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130VDC - 1.05kW 1.8MHz 600MHz NI-780 4Pins 225°C N Channel Flange -
MRF1K50HR5
MRF1K50HR5 - RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

2776261

RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

NXP

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135VDC - 1.667kW 1.8MHz 500MHz NI-1230 4Pins 225°C N Channel Flange -
AFT05MP075NR1
AFT05MP075NR1 - RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

2890588

RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

NXP

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40V - 690W - - TO-270WB 4Pins 150°C N Channel Flange -
BB175X
BB175X - Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

2775911

Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

NXP

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- - - - - - - 125°C - - -
BFU590QX
BFU590QX - Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

2776273

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

NXP

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- - 2W - - SOT-89 3Pins 150°C - Surface Mount -
BFU768F,115
BFU768F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

2890622

Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

NXP

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- - 220mW - - SOT-343F 4Pins 150°C - Surface Mount BFU768F
BFU520WX
BFU520WX - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

2776270

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

NXP

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- - 450mW - - SOT-323 3Pins 150°C - Surface Mount -
MRFE6VS25NR1
MRFE6VS25NR1 - RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, TO-270

2776252

RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, TO-270

NXP

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133VDC - - 1.8MHz 2000MHz TO-270 2Pins 225°C N Channel Flange -
MRFE6VP100HR5
MRFE6VP100HR5 - RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, NI-780

2776256

RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, NI-780

NXP

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133VDC - - 1.8MHz 2000MHz NI-780 4Pins 225°C N Channel Flange -
AFT09MS007NT1
AFT09MS007NT1 - RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

2776255

RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

NXP

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- - 114W - - PLD-1.5W - 150°C N Channel Surface Mount -
MRFE6VP5150NR1
MRFE6VP5150NR1 - RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

2776263

RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

NXP

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133VDC - 952W 1.8MHz 600MHz TO-270WB 4Pins 225°C N Channel Flange -
MRF300BN
MRF300BN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917576

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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133V - 272W 1.8MHz 250MHz TO-247 3Pins 175°C N Channel Through Hole MRF300AN; MRF300BN
BFU520AR
BFU520AR - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

2776271

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

NXP

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- - 450mW - - SOT-23 3Pins 150°C - Surface Mount -
BFU610F,115
BFU610F,115 - Bipolar - RF Transistor, NPN, 5.5 V, 15 GHz, 136 mW, 10 mA, SOT-343F

2776293

Bipolar - RF Transistor, NPN, 5.5 V, 15 GHz, 136 mW, 10 mA, SOT-343F

NXP

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- - 136mW - - SOT-343F 4Pins 150°C - Surface Mount -
MRFE6VP61K25HR5
MRFE6VP61K25HR5 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

2776254

RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

NXP

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133VDC - 1.333kW 1.8MHz 600MHz NI-1230 4Pins 225°C N Channel Flange -
MMRF5014HR5
MMRF5014HR5 - RF FET Transistor, 125 V, 232 W, 1 MHz, 2.7 GHz, NI-360H-2SB

3370166

RF FET Transistor, 125 V, 232 W, 1 MHz, 2.7 GHz, NI-360H-2SB

NXP

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125V - 232W 1MHz 2.7GHz NI-360H-2SB 2Pins 225°C N Channel Flange -
BFU520YX
BFU520YX - Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

2776280

Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

NXP

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- - 450mW - - SOT-363 6Pins 150°C - Surface Mount -