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VISHAY  SI4435DDY-T1-E3  MOSFET Transistor, P Channel, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V

VISHAY SI4435DDY-T1-E3
Technical Data Sheet (273.94KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-11.4A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.0195ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-3V
Power Dissipation Pd:
5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000225