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VISHAY  SI4425BDY-T1-E3  MOSFET Transistor, P Channel, -8.8 A, -30 V, 0.01 ohm, -10 V, -400 mV

VISHAY SI4425BDY-T1-E3
Technical Data Sheet (227.24KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SI4425BDY-T1-E3 is a -30V P-channel TrenchFET® Power MOSFET with advance high density process. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
  • Halogen-free according to IEC 61249-2-21 definition

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-8.8A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.01ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-400mV
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0005