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VISHAY  SI3499DV-T1-GE3  MOSFET Transistor, P Channel, -5.3 A, -8 V, 0.019 ohm, -4.5 V, -350 mV

VISHAY SI3499DV-T1-GE3
Technical Data Sheet (199.86KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-5.3A
Drain Source Voltage Vds:
-8V
On Resistance Rds(on):
0.019ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-350mV
Power Dissipation Pd:
1.1W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000047

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