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VISHAY  SI2337DS-T1-GE3  MOSFET Transistor, P Channel, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V

VISHAY SI2337DS-T1-GE3
Technical Data Sheet (250.85KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-2.2A
Drain Source Voltage Vds:
-80V
On Resistance Rds(on):
0.216ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
760mW
Transistor Case Style:
TO-236
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00001