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VISHAY  SI2325DS-T1-E3  MOSFET Transistor, P Channel, -530 mA, -150 V, 1.3 ohm, -10 V, -4.5 V

VISHAY SI2325DS-T1-E3
Technical Data Sheet (192.14KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-530mA
Drain Source Voltage Vds:
-150V
On Resistance Rds(on):
1.3ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4.5V
Power Dissipation Pd:
750mW
Transistor Case Style:
TO-236
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0001