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VISHAY  SI1912EDH-T1-E3  Dual MOSFET, Dual N Channel, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV

VISHAY SI1912EDH-T1-E3
Technical Data Sheet (252.24KB) EN Technical Data Sheet (111.10KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
1.13A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.22ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
450mV
Power Dissipation Pd:
570mW
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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