Low

DS92LV090ATVEH.. - 

CAN Bus, Transceiver, 3 V, 3.6 V, TQFP

TEXAS INSTRUMENTS DS92LV090ATVEH..

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
DS92LV090ATVEH..
Order Code:
1286835
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
-
:
-40°C
:
85°C
:
64Pins
:
-
:
-
:
TQFP
:
3V
:
-
:
Peel Pack
:
3.6V
:
-
:
MSL 3 - 168 hours
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Product Overview

The DS92LV090ATVEH is a 9-channel Bus LVDS Transceiver designed specifically for the high speed, low power proprietary backplane or cable interfaces. The device operates from a single 3.3V power supply and includes nine differential line drivers and nine receivers. To minimize bus loading, the driver outputs and receiver inputs are internally connected. The separate I/O of the logic side allows for loop back support. The device also features a flow-through pin-out which allows easy PCB routing for short stubs between its pins and the connector. The driver translates 3V TTL levels (single-ended) to differential Bus LVDS (BLVDS) output levels. This allows for high speed operation, while consuming minimal power with reduced EMI. In addition, the differential signalling provides common mode noise rejection of ±1V. The receiver threshold is less than ±100mV over a ±1V common mode range and translates the differential Bus LVDS to standard (TTL/CMOS) levels.
  • Bus LVDS signalling
  • Low power CMOS design
  • High signalling rate capability (above 100Mbps)
  • Supports open and terminated failsafe on port pins
  • Glitch free power up/down (driver and receiver disabled)
  • Light bus loading (5pF typical) per bus LVDS load
  • Designed for double termination applications
  • Balanced output impedance
  • High impedance bus pins on power off (VCC = 0V)
  • 230ps Typical driver channel to channel skew
  • 370ps Typical receiver channel to channel skew
  • ±100mV Receiver sensitivity

Applications

Communications & Networking

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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