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TAIWAN SEMICONDUCTOR  TSM2311CX  MOSFET Transistor, P Channel, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

TAIWAN SEMICONDUCTOR TSM2311CX
Technical Data Sheet (230.91KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The TSM2311CX is a P-channel MOSFET with advanced Trench process technology and ±8V gate source voltage.
  • High Density Cell Design for Ultra Low On-resistance

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-4A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.045ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-600mV
Power Dissipation Pd:
900mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

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