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STMICROELECTRONICS  STFW4N150  Power MOSFET, N Channel, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V

STMICROELECTRONICS STFW4N150
Technical Data Sheet (753.99KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The STFW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
  • 100% Avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • High peak power
  • High ruggedness capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4A
Drain Source Voltage Vds:
1.5kV
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
63W
Transistor Case Style:
TO-3PF
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.52

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