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ON SEMICONDUCTOR  NTJD4001NT1G  Dual MOSFET, Dual N Channel, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V

ON SEMICONDUCTOR NTJD4001NT1G
Technical Data Sheet (66.69KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
250mA
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
1ohm
Rds(on) Test Voltage Vgs:
4V
Threshold Voltage Vgs:
1.2V
Power Dissipation Pd:
272mW
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.002

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