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ON SEMICONDUCTOR  MMBT2907ALT1G  Bipolar (BJT) Single Transistor, General Purpose, PNP, -60 V, 200 MHz, 300 mW, -600 mA, 50 hFE

ON SEMICONDUCTOR MMBT2907ALT1G
Technical Data Sheet (82.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
300mW
DC Collector Current:
-600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00003

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