Low

ON SEMICONDUCTOR  MJH11019G  Bipolar (BJT) Single Transistor, Darlington, PNP, -200 V, 3 MHz, 150 W, -15 A, 400 hFE

ON SEMICONDUCTOR MJH11019G
Technical Data Sheet (135.71KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-200V
Transition Frequency ft:
3MHz
Power Dissipation Pd:
150W
DC Collector Current:
-15A
DC Current Gain hFE:
400hFE
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.003992

Associated Products