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ON SEMICONDUCTOR  MJ21194G  Bipolar (BJT) Single Transistor, Audio, NPN, 250 V, 4 MHz, 250 W, 16 A, 75 hFE

ON SEMICONDUCTOR MJ21194G
Technical Data Sheet (122.38KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
  • Total harmonic distortion characterized
  • High DC current gain
  • Excellent gain linearity
  • High SOA

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
250V
Transition Frequency ft:
4MHz
Power Dissipation Pd:
250W
DC Collector Current:
16A
DC Current Gain hFE:
75hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.01202

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